Improved Cu2O-based solar cells using atomic layer deposition to control the Cu oxidation state at the p-n junction

Advanced Energy Materials

Volumn 4, Issue 11, 2014, Pages

  Lee, Sang Woon ^a,d   Lee, Yun Seog ^b   Heo, Jaeyeong ^c   Siah, Sin Cheng ^b   Chua, Danny ^a   Brandt, Riley E ^b   Kim, Sang Bok ^a   Mailoa, Jonathan P ^b   Buonassisi, Tonio ^b   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Chonnam National University   (South Korea)

^d Ajou University   (South Korea)

Author keywords

interface recombination; photovoltaic devices; solar cells; surface modification; thin films

Indexed keywords

DEPOSITION; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; SURFACE TREATMENT; THIN FILMS; TIN OXIDES;

ABSORBER LAYERS; DIETHYLZINC PRECURSOR; HETEROJUNCTION INTERFACES; INTERFACE RECOMBINATION; OXIDATION STATE; PHOTOVOLTAIC DEVICES; POWER CONVERSION EFFICIENCIES; ZINC-TIN-OXIDE (ZTO);

ATOMIC LAYER DEPOSITION;

EID: 84905741959     PISSN: 16146832     EISSN: 16146840     Source Type: Journal    
DOI: 10.1002/aenm.201301916     Document Type: Article

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