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Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(5) Nomura, Kenji a Kamiya, Toshio a Ohta, Hiromichi a Hirano, Masahiro a Hosono, Hideo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURING; DESORPTION; GALLIUM; PASSIVATION; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC;

AMORPHOUS OXIDES; ANNEALED FILMS; ANNEALING ATMOSPHERES; DEFECT PASSIVATIONS; ROOM TEMPERATURES; SATURATION MOBILITIES; SUB THRESHOLDS; THERMAL ANNEALING; VOLTAGE SWINGS;

ANNEALING;

EID: 56249144477 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3020714 Document Type: Article

Times cited : (305)

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