High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition

Applied Physics Letters

Volumn 88, Issue 12, 2006, Pages

  Carcia, P F ^a   McLean, R S ^a   Reilly, M H ^a  

^a DUPONT COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DEFECT DENSITY; GATE DIELECTRICS; GATE LEAKAGE CURRENT DENSITY;

ALUMINA; CURRENT DENSITY; HAFNIUM COMPOUNDS; HYSTERESIS; SYNTHESIS (CHEMICAL); THRESHOLD VOLTAGE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 33645542322     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2188379     Document Type: Article

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