Low temperature atomic layer deposition of tin oxide

Chemistry of Materials

Volumn 22, Issue 17, 2010, Pages 4964-4973

  Heo, Jaeyeong ^a   Hock, Adam S ^a   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE GRAIN SIZE; COMPOSITION RATIO; ELECTRON DIFFRACTION ANALYSIS; FEW-CYCLE; FREE ELECTRON CONCENTRATION; GRAIN BOUNDARY SCATTERING; GROWTH PER CYCLE; HIGHER TEMPERATURES; INDUCTION PERIODS; LOW TEMPERATURE GROWTH; LOW TEMPERATURES; NANOCRYSTALLINES; NITROGEN IMPURITY; NUMBER OF CYCLES; OPTICAL TRANSMISSIONS; RUTILE PHASE; RUTILE STRUCTURE; SCATTERING MECHANISMS; SELF-LIMITED GROWTH; SEMICONDUCTOR LAYERS; TRANSPARENT ELECTRODE;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; CARBON FILMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MULTIPLIERS; ELECTRONS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HYDROGEN; HYDROGEN PEROXIDE; LIGHT EMITTING DIODES; LIGHT TRANSMISSION; ORGANIC COATINGS; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDATION; OXIDE MINERALS; PLASTIC COATINGS; PROTECTIVE COATINGS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCATTERING; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; TIN; TIN OXIDES; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTIVE FILMS;

EID: 77956395999     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm1011108     Document Type: Article

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