Integrated Circuit Technologies: From Conventional CMOS To The Nanoscale Era

Nano and Giga Challenges in Microelectronics

Volumn , Issue , 2003, Pages 1-25

  Zeitzoff, Peter M ^a   Hutchby, James A ^b   Bersuker, Gennadi ^a   Huff, Howard R ^a  

^a SEMATECH   (United States)

^b SEMICONDUCTOR RESEARCH CORPORATION   (United States)

Author keywords

FinFET.; high k gate dielectric.; MOSFET scaling.; non classical CMOS.; strained Si on SiGe: enhanced mobility channel

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FINFET; GATE DIELECTRICS; HIGH-K DIELECTRIC; MOS DEVICES; TIMING CIRCUITS;

CHIP CIRCUIT REQUIREMENTS; ENHANCED MOBILITY; HIGH- K GATE DIELECTRICS; INTEGRATED CIRCUIT TECHNOLOGY; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; MOSFET SCALING; MULTIPLE GATE MOSFETS; NON-CLASSICAL CMOS;

MOSFET DEVICES;

EID: 84942088697     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-044451494-3/50001-9     Document Type: Chapter

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