CMOS devices below 0.1 μm: How high will performance go?

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 215-218

  Taut, Yuan ^a   Nowak, Edward J ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SHORT CHANNEL EFFECTS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; GATES (TRANSISTOR); SEMICONDUCTOR DOPING;

CMOS INTEGRATED CIRCUITS;

EID: 84886447961     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)