50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 51-54

  Hergenrother, J M ^a   Wilk, G D ^a   Nigam, T ^a   Klemens, F P ^a   Monroe, D ^a   Silverman, P J ^a   Sorsch, T W ^a   Busch, B ^a   Green, M L ^a   Baker, M R ^a   Boone, T ^a   Bude, M K ^a   Ciampa, N A ^a   Ferry, E J ^a   Fiory, A T ^a   Hillenius, S J ^a   Jacobson, D C ^a   Johnson, R W ^a   Kalavade, P ^a   Keller, R C ^a   King, C A ^a   Kornblit, A ^a   Krautter, H W ^a   Lee, J T C ^a   Mansfield, W M ^a   Miner, J F ^a   Morris, M D ^a   Oh, S H ^a   Rosamilia, J M ^a   Sapjeta, B J ^a   Short, K ^a   Steiner, K ^a   Muller, D A ^a   Voyles, P M ^a   Grazul, J L ^a   Shero, E J ^a   Givens, M E ^a   Pomarede, C ^a   Mazanec, M ^a   Werkhoven, C ^a   more..

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; ELECTRODES; HAFNIUM COMPOUNDS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THERMODYNAMIC STABILITY;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; DIELECTRIC CONFORMALITY; GATE LEAKAGE CURRENT DENSITY; HAFNIUM OXIDE; POLYSILICON GATE ELECTRODES; TARGET EQUIVALENT OXIDE THICKNESS; VERTICAL REPLACEMENT-GATE;

MOSFET DEVICES;

EID: 0035714562     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length
2. 50 nm vertical replacement-gate (VRG) pMOSFETs
3. The vertical replacement-gate (VRG) process for scalable general-purpose complementary logic
4. High-k gate dielectrics current status and materials properties considerations
5. 3 gate dielectrics for ULSI applications
6. Dopant penetration effects on polysilicon gate HfO MOSFETs
7. Performance and reliability of ultra thin CVD HfO gate dielectrics with dual poly-Si gate electrodes
8. 2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation
9. Atomic layer epitaxy