SCOPUS 정보 검색 플랫폼

Science

Volumn 293, Issue 5537, 2001, Pages 2044-2049

Limits on silicon nanoelectronics for terascale integration

(3) Meindl, J D a Chen, Q a Davis, J A a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LSI CIRCUITS; MOS DEVICES; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON;

SILICON CHANNEL;

ELECTRONIC EQUIPMENT;

METAL OXIDE; NANOPARTICLE; SILICON;

DEVICE; DIELECTRIC CONSTANT; ELECTROMAGNETIC FIELD; ELECTRONICS; INTEGRATED CIRCUIT; MATERIALS; PHYSICS; PRIORITY JOURNAL; QUANTUM MECHANICS; REVIEW; SEMICONDUCTOR; SYSTEM ANALYSIS; TECHNOLOGY; THERMODYNAMICS;

EID: 0035860451 PISSN: 00368075 EISSN: None Source Type: Journal
DOI: 10.1126/science.293.5537.2044 Document Type: Review

Times cited : (341)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.