Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 467-470

  Zhong, Huicai ^a   Hong, Shin Nam ^b   Suh, You Seok ^a   Lazar, Heather ^a   Heuss, Greg ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

^b Hankuk Aviation University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; ELECTRODES; INTERFACES (MATERIALS); MOS CAPACITORS; RAPID THERMAL ANNEALING; THERMAL EFFECTS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

GATE DIELECTRIC INTERFACE; GATE ELECTRODES; RUTHENIUM TANTALUM ALLOYS; SILICON DEVICES;

RUTHENIUM ALLOYS;

EID: 0035714288     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979543     Document Type: Article

References (5)

1. 2
2. 2 gates for dual gate CMOS
3. Material characteristics and thermal stability of co-sputtered Ta-Ru thin films
4. Work function of binary alloys