Electrical characteristics of TaSixNy gate electrodes for dual gate Si-CMOS devices

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 47-48

  Suh, Y S ^a   Heuss, G ^a   Zhong, H ^a   Hong, S N ^a   Misra, V ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; GATES (TRANSISTOR); MOS CAPACITORS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS;

GATE ELECTRODES;

ELECTRODES;

EID: 0034796391     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)