Annealing temperature modulated interfacial chemistry and electrical characteristics of sputtering-derived HfO2/Si gate stack

Journal of Alloys and Compounds

Volumn 647, Issue , 2015, Pages 322-330

  Gao, J ^a,b   He, G ^a   Zhang, J W ^a   Deng, B ^a   Liu, Y M ^a  

^a ANHUI UNIVERSITY   (China)

^b ANHUI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Electrical properties; High k gate dielectric; Interface thermal stability; Leakage current mechanism; Sputtering

Indexed keywords

ALUMINUM COMPOUNDS; ANNEALING; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; LOGIC GATES; LOW-K DIELECTRIC; MOLECULAR ORBITALS; SILICA; SILICATES; SILICON OXIDES; SPUTTERING; SUBSTRATES; VAPOR DEPOSITION;

ANNEALING TEMPERATURES; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; ELECTRICAL PERFORMANCE; HIGH- K GATE DIELECTRICS; LEAKAGE CURRENT MECHANISMS; POST DEPOSITION ANNEALING; VAPOR DEPOSITION METHOD;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84933500128     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2015.05.157     Document Type: Article

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