Temperature dependence of electrical properties for mos capacitor with hfO2/siO2gate dielectric stack

Materials Science in Semiconductor Processing

Volumn 16, Issue 5, 2013, Pages 1321-1327

  Yu, T ^a   Jin, C G ^a   Dong, Y J ^a   Cao, D ^b   Zhuge, L J ^a   Wu, X M ^a,b  

^a SOOCHOW UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Accumulation current; Hysteresis; Interfacial density of state; Inversion current; Temperature dependence

Indexed keywords

CAPACITORS; DIELECTRIC DEVICES; FLASH MEMORY; GATE DIELECTRICS; HAFNIUM OXIDES; HYSTERESIS; METALS; MOS CAPACITORS; MOS DEVICES; OXIDE SEMICONDUCTORS;

BIAS TEMPERATURE STRESS; EFFECTIVE OXIDE THICKNESS; INTERFACIAL DENSITY; MEASUREMENT TEMPERATURES; METAL-OXIDE- SEMICONDUCTORCAPACITORS; OXIDE TRAPPED CHARGE DENSITY; SHOCKLEY-READ-HALL MODELS; TEMPERATURE DEPENDENCE;

TEMPERATURE DISTRIBUTION;

EID: 84885424576     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.09.013     Document Type: Article

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