Atomic-layer-deposited Al2O3-HfO2 laminated and sandwiched dielectrics for metal-insulator-metal capacitors

Journal of Physics D: Applied Physics

Volumn 40, Issue 4, 2007, Pages 1072-1076

  Ding, Shi Jin ^a   Zhang, David Wei ^a   Wang, Li Kang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; CAPACITANCE; ELECTRIC BREAKDOWN; LAMINATED COMPOSITES; LEAKAGE CURRENTS; MIM DEVICES; SANDWICH STRUCTURES;

GRAIN BOUNDARY CHANNELS; LAMINATED DIELECTRICS; VOLTAGE LINEARITY;

DIELECTRIC MATERIALS;

EID: 33947690205     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/4/023     Document Type: Article

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