Interfacial chemical structure of HfO2 Si film fabricated by sputtering

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Jiang, Ran ^a   Xie, Erqing ^a   Wang, Zhenfang ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURSORY MODELS; HFO2; INTERFACIAL STRUCTURES; SILICIDES;

BINDING ENERGY; ELECTRIC VARIABLES MEASUREMENT; MOLECULAR STRUCTURE; SILICON; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

HYDROGEN INORGANIC COMPOUNDS;

EID: 33749459757     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358841     Document Type: Article

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