S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates

Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

  Aguirre Tostado, F S ^a   Milojevic, M ^a   Choi, K J ^a   Kim, H C ^a   Hinkle, C L ^a   Vogel, E M ^a   Kim, J ^a   Yang, T ^b   Xuan, Y ^b   Ye, P D ^b   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; GALLIUM ALLOYS; HAFNIUM; HAFNIUM COMPOUNDS; PASSIVATION; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; TECHNOLOGY;

ATOMIC LAYER DEPOSITIONS; BAND BENDING; HAFNIUM ALUMINATE; INTERFACE ENGINEERING; SYSTEMATIC STUDY;

ATOMIC LAYER DEPOSITION;

EID: 49749116852     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2961003     Document Type: Article

References (26)

1. C. W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces (Plenum, New York, 1985).
2. M. Passlack, Proceedings of the Electrochemical Society, 2005 (unpublished), Vol. PV 2005-01, pp. 417-433
3. M. Passlack, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 0003-6951 10.1063/1.115725 68, 1099 (1996).
4. H. C. Lin, P. D. Ye, and G. D. Wilk, Appl. Phys. Lett. 0003-6951 10.1063/1.2120904 87, 182904 (2005).
5. T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y. Q. Wu, J. M. Woodall, P. D. Ye, F. S. Aguirre-Tostado, M. Milojevic, S. McDonnell, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 10.1063/1.2798499 91, 142122 (2007).
6. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 10.1063/1.2801512 91, 163512 (2007).
7. S. Oktyabrsky, V. Tokranov, M. Yakimov, R. Moore, S. Koveshnikov, W. Tsai, F. Zhu, and J. C. Lee, Mater. Sci. Eng., B 0921-5107 10.1016/j.mseb.2006. 08.018 135, 272 (2006).
8. I. Ok, H. Kim, M. Zhang, C. -Y. Kang, S. J. Rhee, C. Choi, S. A. Krishnan, T. Lee, F. Zhu, G. Thareja, and J. C. Lee, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.870243 27, 145 (2006).
9. R. L. Puurunen, J. Appl. Phys. 0021-8979 10.1063/1.1940727 97, 121301 (2005).
10. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 10.1063/1.2883956 92, 071901 (2008).
11. V. Malhotra and C. W. Wilmsen, in Handbook of Compound Semiconductors: Growth, Processing, Characterization, and Devices, edited by, P. H. Holloway, and, G. E. McGuire, (Noyes, New Jersey, 1995), pp. 328-335.
12. K. Martens, W. Wang, K. De Keersmaecker, G. Borghs, G. Groeseneken, and H. Maes, Microelectron. Eng. 84, 2146 (2007).
13. C. J. Sandroff, R. N. Nottenburg, J. -C. Bischoff, and R. Bhat, Appl. Phys. Lett. 0003-6951 10.1063/1.98877 51, 33 (1987).
14. E. Yablonovitch, C. J. Sandroff, R. Bhat, and T. Gmitter, Appl. Phys. Lett. 0003-6951 10.1063/1.98415 51, 439 (1987).
15. R. N. Nottenburg, C. J. Sandroff, D. A. Humphrey, T. H. Hollenbeck, and R. Bhat, Appl. Phys. Lett. 0003-6951 10.1063/1.99524 52, 218 (1988).
16. H. Sugahara, M. Oshima, H. Oigawa, H. Shigekawa, and Y. Nannichi, J. Appl. Phys. 0021-8979 10.1063/1.348380 69, 4349 (1991).
17. Z. H. Lu, M. J. Graham, X. H. Feng, and B. X. Yang, Appl. Phys. Lett. 0003-6951 10.1063/1.109201 62, 2932 (1993).
18. H. Sik, Y. Feurprier, C. Cardinaud, G. Turban, and A. Scavennec, J. Electrochem. Soc. 0013-4651 10.1149/1.1837749 144, 2106 (1997).
19. T. Ohno, Phys. Rev. B 0163-1829 10.1103/PhysRevB.44.6306 44, 6306 (1991).
20. D. Shahrjerdi, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 0003-6951 10.1063/1.2764438 91, 063501 (2007).
21. D. Shahrjerdi, D. I. Garcia-Gutierrez, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 0003-6951 10.1063/1.2937404 92, 223501 (2008).
22. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H. -J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 0003-6951 10.1063/1.1590743 83, 180 (2003).
23. M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, G. Grazul, and D. A. Muller, Appl. Phys. Lett. 0003-6951 10.1063/1.1899745 86, 152904 (2005).
24. C. J. Sandroff, M. S. Hedge, L. A. Farrow, C. C. Chang, and J. P. Harbison, Appl. Phys. Lett. 0003-6951 10.1063/1.101451 54, 362 (1989).
25. C. J. Powell and A. Jablonski, NIST Electron Effective Attenuation-Length Database Version 1.1, NIST Standard Reference Database 82.
26. J. Spindt, D. Liu, K. Miyano, P. L. Meissner, T. T. Chiang, T. Kendelewicz, I. Lindau, and W. E. Spicer, Appl. Phys. Lett. 0003-6951 10.1063/1.101780 55, 861 (1989).