Chemical structure and electrical properties of sputtered HfO2 films on Si substrates annealed by rapid thermal annealing

Vacuum

Volumn 83, Issue 9, 2009, Pages 1155-1158

  Tan, Tingting ^a   Liu, Zhengtang ^a   Lu, Hongcheng ^a   Liu, Wenting ^a   Yan, Feng ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

C V; Chemical structure; HfO2; J V; RTA

Indexed keywords

C-V; CHEMICAL STRUCTURE; HFO2; J-V; RTA;

BINDING ENERGY; ELECTRIC PROPERTIES; HAFNIUM; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; STRUCTURE (COMPOSITION); X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 67349237090     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.02.012     Document Type: Article

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