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Applied Physics A: Materials Science and Processing

Volumn 93, Issue 3, 2008, Pages 681-684

Structure and electrical properties of HfO2 high-k films prepared by pulsed laser deposition on Si (100)

(10) Wang, Hao a Wang, Y a Feng, J a Ye, C a Wang, B Y a Wang, H B a Li, Q b Jiang, Y c Huang, A P d Xiao, Z S d

a HUBEI UNIVERSITY (China)

b CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

c UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

d BEIHANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SILICON;

AMORPHOUS; APPLIED VOLTAGES; CAPACITANCE VALUES; DEPOSITED FILMS; DIELECTRIC CONSTANTS; ELECTRICAL PROPERTIES; HAFNIUM DIOXIDE FILMS; NEGATIVE CHARGES; PULSED LASERS; ROOM TEMPERATURES; SI (100) SUBSTRATES; SI(100); V CURVES; VOLTAGE SHIFTS;

AMORPHOUS FILMS;

EID: 54549088943 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4695-8 Document Type: Article

Times cited : (33)

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