Temperature stress response of germanium MOS capacitors with HfO 2/HfSiON gate dielectrics

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 803-814

  Arora, Rajan ^a   Schmidt, B W ^b   Fleetwood, D M ^a   Schrimpf, R D ^a   Galloway, K F ^a   Rogers, B R ^b   Chung, K B ^c   Lucovsky, G ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; GERMANIUM; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; NITRIDES; SILICA; SILICON NITRIDE;

BORDER TRAPS; ELECTRICAL STRESS; GERMANIUM SUBSTRATES; INTERFACE TRAPS; OXIDE GROWTH; TEMPERATURE STRESS;

MOS CAPACITORS;

EID: 76549112220     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122135     Document Type: Conference Paper

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