Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics

Journal of Materials Science: Materials in Electronics

Volumn 25, Issue 9, 2014, Pages 4163-4169

  Deng, B ^a   He, G ^a,b   Chen, X S ^b   Chen, X F ^a   Zhang, J W ^a   Liu, M ^c   Lv, J G ^d   Sun, Z Q ^a  

^a ANHUI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c INSTITUTE OF SOLID STATE PHYSICS   (China)

^d HEFEI NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATE DIELECTRICS; QUARTZ; REFRACTIVE INDEX; SILICON; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; ULTRAVIOLET VISIBLE SPECTROSCOPY; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; HIGH-K GATE DIELECTRICS; POLYCRYSTALLINE STRUCTURE; POST-ANNEALING TEMPERATURE; RADIO FREQUENCY MAGNETRON SPUTTERING; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL CHARACTERISTICS; UV-VIS SPECTROSCOPY;

HAFNIUM OXIDES;

EID: 84905864271     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-014-2144-3     Document Type: Article

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