Electrical characteristics of postdeposition annealed Hf O2 on silicon

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Puthenkovilakam, Ragesh ^a   Sawkar, Monica ^a   Chang, Jane P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; FILM STRESS; INTERFACE STATE DENSITY; POSTDEPOSITION ANNEALING;

ANNEALING; CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; LEAKAGE CURRENTS; MOSFET DEVICES; OPTIMIZATION; PERMITTIVITY; PHOTOLITHOGRAPHY; ULTRATHIN FILMS;

SILICON;

EID: 20844437263     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1927273     Document Type: Article

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