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Journal of Applied Physics

Volumn 106, Issue 1, 2009, Pages

Interfacial and structural properties of sputtered HfO2 layers

(2) Aygun, G a Yildiz, I b

a IZMIR INSTITUTE OF TECHNOLOGY (Turkey)

b MIDDLE EAST TECHNICAL UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC CONCENTRATION; CHEMICAL ENVIRONMENT; DEPOSITED FILMS; FOURIER TRANSFORM INFRARED; FT-IR SPECTRUM; GAS RATIO; GROWTH PARAMETERS; HEATED SI SUBSTRATE; MONOCLINIC PHASE; OXYGEN ATOM; SI SUBSTRATES; SI-SI BONDS; SPECTROSCOPIC ELLIPSOMETER; SPUTTERING POWER; SPUTTERING TIME; SUBSTRATE TEMPERATURE; THIN LAYERS; TOP SURFACE; XPS; XRD SPECTRA;

ATOMS; DEPTH PROFILING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; OXYGEN; PHASE INTERFACES; SILICON; SILICON COMPOUNDS; SPUTTERING; SUBSTRATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67650714401 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3153953 Document Type: Article

Times cited : (60)

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