Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma

ACS Applied Materials and Interfaces

Volumn 7, Issue 20, 2015, Pages 10806-10813

  Ovanesyan, Rafaiel A ^a   Hausmann, Dennis M ^b   Agarwal, Sumit ^a  

^a Department of Metallurgical and Materials Engineering   (United States)

^b LAM RESEARCH CORPORATION   (United States)

Author keywords

ALD; Hexachlorodisilane; Infrared; Plasma; Silicon nitride

Indexed keywords

AMMONIA; ASPECT RATIO; ATOMS; FILM GROWTH; FORWARD SCATTERING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED RADIATION; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; TEMPERATURE; THIN FILMS;

FILM GROWTH MECHANISM; GROWTH PER CYCLE; HEXACHLORODISILANE; HIGH ASPECT RATIO NANO-STRUCTURES; LOW TEMPERATURES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SITU ATTENUATED TOTAL REFLECTION-FOURIER TRANSFORM INFRARED SPECTROSCOPY; SUBSTRATE TEMPERATURE;

ATOMIC LAYER DEPOSITION;

EID: 84930619228     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b01531     Document Type: Article

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