GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Applied Surface Science

Volumn 256, Issue 24, 2010, Pages 7434-7437

  Bosund, M ^a   Mattila, P ^a   Aierken, A ^a   Hakkarainen, T ^a   Koskenvaara, H ^a   Sopanen, M ^a   Airaksinen, V M ^a   Lipsanen, H ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Aluminum nitride; GaAs passivation; Plasma enhanced ALD

Indexed keywords

ALUMINUM COATINGS; ALUMINUM NITRIDE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NITRIDES; OPTICAL PROPERTIES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

ATOMIC LAYER DEPOSITED; GAAS; PASSIVATION EFFECT; PASSIVATION METHODS; PHOTOLUMINESCENCE INTENSITIES; PHOTOLUMINESCENCE PEAK; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; QUANTUM WELL STRUCTURES;

ATOMIC LAYER DEPOSITION;

EID: 77955430981     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.05.085     Document Type: Article

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