Plasma enhanced atomic layer deposition of SiNx:H and SiO 2

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 4, 2011, Pages

  King, Sean W ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; CONFORMALITY; DIELECTRIC COATINGS; HYBRID TECHNIQUES; INTERCONNECT TECHNOLOGY; LOW TEMPERATURE PROCESSING; MOISTURE BARRIERS; PLASMA EXPOSURE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PROCESS GAS; STEP COVERAGE;

ATOMIC LAYER DEPOSITION; ATOMS; CARBON DIOXIDE; CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SILICON NITRIDE; THICKNESS CONTROL;

PLASMA DEPOSITION;

EID: 79960492804     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3584790     Document Type: Article

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