Dependence of TFT performance on the dielectric characteristics

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 71-76

  Lavareda, G ^a,b   Nunes de Carvalho, C ^a,b   Amaral, A ^a   Fortunato, E ^b   Ramos, A R ^c   Da Silva, M F ^c  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b DEPARTAMENTO DE CIÊNCIA DOS MATERIAIS   (Portugal)

^c INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

A SiNX:H; ERD; FTIR; Nitride stoichiometry; RBS; TFT

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRON MOBILITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; STOICHIOMETRY; THIN FILMS;

FIELD EFFECT MOBILITY;

THIN FILM TRANSISTORS;

EID: 0037416711     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01249-X     Document Type: Conference Paper

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