A comparative study on the Si precursors for the atomic layer deposition of silicon nitride thin films

Journal of the Korean Physical Society

Volumn 45, Issue 5 II, 2004, Pages 1352-1355

  Lee, Won Jun ^a   Lee, Joo Hyeon ^b   Park, Chong Ook ^b   Lee, Youn Seoung ^c   Shin, Seung Jung ^d   Rha, Sa Kyun ^c  

^a Sejong University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Hanbat National University   (South Korea)

^d Hansei University   (South Korea)

Author keywords

Atomic layer deposition; Deposition rate; SiCl 4; SiH 2Cl 2; Silicon nitride; X ray photoelectron spectroscopy

Indexed keywords

EID: 10444255426     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (11)

1. M. Pessa, R. Makela and T. Suntola, Appl. Phys. Lett. 38, 131 (1981).
2. T. Lee, .J. Ahn, J. Oh, Y. Kim, Y.-B. Kim and D.-K. Choi, J. Korean Phys. Soc. 42, 272 (2003).
3. S. J. Kwon, H. J. Lee, Y. W. Seo and H. S. Jeong, J. Korean Phys. Soc. 43, 709 (2003).
4. H. K. Kim, J. Y. Kim, J. Y. Park, Y. Kim, Y. D. Kim and H. Jeon, J. Korean Phys. Soc. 41, 739 (2002).
5. J. D. Plummer, M. D. Deal and P. B. Griffin, Silicon VLSI Technology (Prentice Hall, Upper Saddle River, NJ, USA, 2000), Chap. 2.
6. H.-K. Kang, in Proceeding of AVS International Topical Conference on Atomic Layer Deposition 2003 (San Jose, CA USA, 2003), p. 17.
7. S.-S. Lee, D.-G. Hwang, K. Rhie and S.-W. Kim, J. Korean Phys. Soc. 41, 749 (2002).
8. H. Goto, K. Shibahara and S. Yokoyama, Appl. Phys. Lett. 68, 3257 (1996).
9. S. Morishita, S. Sugahara and M. Matsumura, Appl. Surf. Sci. 112, 198 (1997).
10. J. W. Klaus, A. W. Ott, A. C. Dillon and S. M. George, Surf. Sci. 418, L14 (1998).
11. V. I. Belyi, L. L. Vasilyeva, A. S. Ginovker, V. A. Gritsenko, S. M. Repinsky, S. P. Sinitsa, T. P. Smirnova and F. L. Edelman, Silicon Nitride in Electronics (Elsevier, Amsterdam Netherlands, 1988), p. 99.