Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 3975-3978

  Park, Kwangchol ^a   Yun, Won Deok ^b   Choi, Byoung Jun ^c   Kim, Heon Do ^d   Lee, Won Jun ^c   Rha, Sa Kyun ^b   Park, Chong Ook ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanbat National University   (South Korea)

^c Sejong University   (South Korea)

^d Jusung Engineering Company Limited   (South Korea)

Author keywords

Ammonia (NH3); Atomic layer deposition (ALD); Deposition temperature; Hexachlorodisilane (Si2Cl6); Silicon nitride (SiNx)

Indexed keywords

AIR EXPOSURES; ATOMIC LAYER DEPOSITION (ALD); DEPOSITED FILMS; DEPOSITED SILICON NITRIDE FILMS; DEPOSITION REACTIONS; DEPOSITION TEMPERATURE; ELECTRICAL PROPERTIES; HEXACHLORODISILANE (SI2CL6); NONSTOICHIOMETRIC; PROCESS TEMPERATURES; REACTANT EXPOSURES; SILICON NITRIDE FILMS; SILICON NITRIDE THIN FILMS; THERMAL DEPOSITIONS; WAFER TEMPERATURES;

AMMONIA; ATOMIC LAYER DEPOSITION; ATOMS; DEPOSITION; ELECTRIC PROPERTIES; OXYGEN; REACTION RATES; SILICON; SILICON NITRIDE; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65449187823     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.118     Document Type: Article

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