Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled C H2 F2 / H2 plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 1, 2010, Pages 65-68

  Kim, J S ^a   Kwon, B S ^a   Heo, W ^a   Jung, C R ^a   Park, J S ^a   Shon, J W ^b   Lee, N E ^a  

^a Sungkyunkwan University   (South Korea)

^b Jusung Engineering Company Limited   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON (A-C); ANTIREFLECTIVE; AR PLASMAS; CAPACITIVELY COUPLED; CAPACITIVELY COUPLED PLASMAS; DEGREE OF POLYMERIZATION; DUAL FREQUENCY; ETCH SELECTIVITY; GAS-FLOW RATIO; HIGH ASPECT RATIO; HIGH FREQUENCY HF; LOW FREQUENCY; MASK LAYER; MASK PATTERNS; PATTERNED WAFERS; PROCESS PARAMETERS; PROCESS WINDOW; SELECTIVE ETCHING;

AERODYNAMICS; AMORPHOUS CARBON; AMORPHOUS SILICON; ASPECT RATIO; ETCHING; FLOW OF GASES; INDUCTIVELY COUPLED PLASMA; MASKS; SILICON NITRIDE; VAPORS;

SILICON WAFERS;

EID: 73849150142     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3268624     Document Type: Article

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