Atomic layer controlled growth of Si3N4 films using sequential surface reactions

Surface Science

Volumn 418, Issue 1, 1998, Pages

  Klaus, J W ^a   Ott, A W ^a,b   Dillon, A C ^a,c   George, S M ^a  

^a UNIVERSITY OF COLORADO   (United States)

^b Northwestern University   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Amorphous thin films; Atomic force microscopy; Ellipsometry; Growth; Infrared absorption spectroscopy; Silicon; Silicon nitride; Surface chemical reaction

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; REACTION KINETICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON WAFERS; SURFACE PHENOMENA; SURFACE TOPOGRAPHY;

SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING FILMS;

EID: 0032204276     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00705-5     Document Type: Article

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