Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 352-356

  Yokoyama, Shin ^a   Ikeda, Norihiko ^a   Kajikawa, Kouji ^a   Nakashima, Yoshimitsu ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CATALYSIS; CHLORINE COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; DISSOCIATION; HYDROGEN BONDS; PLASMAS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

ATOMIC LAYER DEPOSITION (ALD); SELECTIVE DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0032094711     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00083-X     Document Type: Article

References (8)

1. D.E. Aspnes, J. Nishizawa, W.F. van der Weg (Eds.), Appl. Surf. Sci. 112, Special Issue for Proceedings of the 4th Int. Symp. on Atomic Layer Epitaxy and Related Surface Processes, Lintz Austria, 1996, North-Holland, New York, 1997.
2. K. Tsubouchi K. Masu Thin Solid Films 228 1993 312
3. H. Goto K. Shibahara S. Yokoyama Appl. Phys. Lett. 68 1996 3257
4. S. Yokoyama H. Goto T. Miyamoto N. Ikeda K. Shibahara Appl. Surf. Sci. 112 1997 75
5. G.S. Higashi Y.J. Chabal G.W. Trucks K. Raghavachari Appl. Phys. Lett. 56 1990 656
6. H. Matsumura Jpn. J. Appl. Phys. 28 1989 2157
7. H. Okabe, Photochemistry of Small Molecules, Wiley-Interscience, New York, 1978, p. 272.
8. S. Morishita S. Sugahara M. Matsumura Appl. Surf. Sci. 112 1997 198