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Volumn 46, Issue 20, 2013, Pages

Highly selective silicon nitride etching to Si and SiO2 for a gate sidewall spacer using a CF3I/O2/H2 neutral beam

(8) Nakayama, Daiki a Wada, Akira a Kubota, Tomohiro a Bruce, Robert b Martin, Ryan M b Haass, Moritz b Fuller, Nicholas b Samukawa, Seiji a

a TOHOKU UNIVERSITY (Japan)

b IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM ENERGIES; NEUTRAL BEAM ETCHING; NEUTRAL BEAMS; SELECTIVE ETCHING; SI SUBSTRATES; SIDEWALL SPACER; SILICON NITRIDE (SIN); WITHOUT UV IRRADIATIONS;

PLASMA ETCHING; SILICA; SILICON; SILICON NITRIDE; SILICON OXIDES;

PARTICLE BEAMS;

EID: 84878219024 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/46/20/205203 Document Type: Article

Times cited : (16)

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