SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 112, Issue , 1997, Pages 198-204

Atomic-layer chemical-vapor-deposition of silicon-nitride

(3) Morishita, Shunsuke a Sugahara, Satoshi a Matsumura, Masakiyo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; ELECTRON TUNNELING; HYDRAZINE; MONOLAYERS; NITROGEN COMPOUNDS; SATURATION (MATERIALS COMPOSITION); SILICON NITRIDE; THERMAL EFFECTS; THIN FILMS;

ATOMIC LAYER EPITAXY; DICHLOROSILANE;

CHEMICAL VAPOR DEPOSITION;

EID: 0031546976 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)01006-9 Document Type: Article

Times cited : (69)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.