Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 211, Issue 9, 2014, Pages 2166-2171

  Jang, Woochool ^a   Jeon, Heeyoung ^a   Kang, Chunho ^a,b   Song, Hyoseok ^a   Park, Jingyu ^a   Kim, Hyunjung ^a   Seo, Hyungtak ^c   Leskela, Markku ^d   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Ajou University   (South Korea)

^d UNIVERSITY OF HELSINKI   (Finland)

Author keywords

defect; H content; remote plasma atomic layer deposition; silicon nitride thin film

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; DEFECT DENSITY; DEFECTS; FLASH MEMORY; HYDROGEN; NITRIDES; REFRACTIVE INDEX; SILICON; SILICON NITRIDE; TEMPERATURE DISTRIBUTION; THIN FILMS;

CHARGE TRAP FLASH MEMORY; DEPOSITION TEMPERATURES; H-CONTENT; HYDROGEN CONTENTS; LOW TEMPERATURES; REMOTE PLASMA ATOMIC LAYER DEPOSITIONS; SILICON NITRIDE THIN FILMS; TEMPERATURE DEPENDENCE;

DEPOSITION;

EID: 85027929933     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201431162     Document Type: Article

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