Indium oxide - A transparent, wide-band gap semiconductor for (opto)electronic applications

Semiconductor Science and Technology

Volumn 30, Issue 2, 2015, Pages

  Bierwagen, Oliver ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

In2O3; indium oxide; indium tin oxide; ITO; oxide electronics

Indexed keywords

CARRIER TRANSPORT; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ENERGY GAP; OHMIC CONTACTS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; TIN OXIDES;

ELECTRON CONCENTRATION; ELECTRONIC APPLICATION; IN2O3; INDIUM OXIDE; INDIUM TIN OXIDE; OXIDE ELECTRONICS; SINGLE-CRYSTALLINE MATERIALS; SURFACE ELECTRON ACCUMULATION;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84921516090     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/30/2/024001     Document Type: Article

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