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Volumn 95, Issue 26, 2009, Pages

Plasma-assisted molecular beam epitaxy of high quality In2O 3(001) thin films on Y-stabilized ZrO2(001) using in as an auto surfactant

(4) Bierwagen, Oliver a White, Mark E a Tsai, Min Ying a Speck, James S a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH CONDITIONS; HIGH QUALITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SEMICONDUCTOR APPLICATIONS; SURFACE FREE ENERGY;

CRYSTAL GROWTH; FREE ENERGY; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXYGEN; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

SURFACES;

EID: 73649095542 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3276910 Document Type: Article

Times cited : (57)

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