Erratum: Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface (Journal of Materials Research (2012) 27 (17) 2232-2236 DOI: 10.1557/jmr.2012.172);Electron transport in semiconducting SnO2: Intentional bulk donors and acceptors, the interface, and the surface

Journal of Materials Research

Volumn 27, Issue 17, 2012, Pages 2232-2236

  Bierwagen, Oliver ^a,b   Nagata, Takahiro ^b,c   White, Mark E ^b   Tsai, Min Ying ^b   Speck, James S ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b University of California   (United States)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; TIN DIOXIDE; TRANSPARENT CONDUCTING OXIDES;

ELECTRON TRANSPORT; N-TYPE CONDUCTIVITY; ORDERS OF MAGNITUDE; P TYPE CONDUCTIVITY; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SEMICONDUCTING OXIDE; SUBSTRATE INTERFACE; SURFACE ACCUMULATION;

INTERFACES (MATERIALS);

EID: 84865513354     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2012.293     Document Type: Erratum

References (25)

1. M. Batzill and U. Diebold: The surface and materials science of tin oxide. Prog. Surf. Sci. 79, 47 (2005).
2. Z.M. Jarzebski and J.P. Morton: Physical properties of SnO2 materials: II. Electrical properties. J. Electrochem. Soc. 123, 299C (1976).
3. M.E. White, M.Y. Tsai, F. Wu, and J.S. Speck: Plasma-assisted molecular beam epitaxy and characterization of SnO2 (101) on r-plane sapphire. J. Vac. Sci. Technol., A 26, 1300 (2008).
4. S.K. Vasheghani Farahani, T.D. Veal, A.M. Sanchez, O. Bierwagen, M.E. White, S. Gorfman, P.A. Thomas, J.S. Speck, and C.F. McConville: Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire. Phys. Rev. (2012, submitted).
5. M.E. White, O. Bierwagen, M.Y. Tsai, and J.S. Speck: Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy. J. Appl. Phys. 106, 093704 (2009).
6. K. Rakennus, K. Tappura, T. Hakkarainen, H. Asonen, R. Laiho, S.J. Rolfe, and J.J. Dubowski: Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy. J. Cryst. Growth 110, 910 (1991).
7. O. Bierwagen, S. Choi, and J.S. Speck: Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN. Phys. Rev. B 84, 235302 (2011).
8. M.E. White, O. Bierwagen, M.Y. Tsai, and J.S. Speck: Synthesis and characterization of highly resistive epitaxial indium-doped SnO2. Appl. Phys. Express 3, 051101 (2010).
9. M.Y. Tsai, M.E. White, and J.S. Speck: Plasma-assisted molecular beam epitaxy of SnO2 on TiO2. J. Cryst. Growth 310, 4256 (2008).
10. T. Ohgaki, N. Ohashi, S. Sugimura, H. Ryoken, I. Sakaguchi, Y. Adachi, and H. Haneda: Positive Hall coefficients obtained from contact misplacement on evident n-type ZnO films and crystals. J. Mater. Res. 23, 2293 (2008).
11. O. Bierwagen, T. Ive, C.G. Van de Walle, and J.S. Speck: Causes of incorrect carrier-type identification in van der Pauw-Hall measurements. Appl. Phys. Lett. 93, 242108 (2008).
12. D.C. Look: Electrical and optical properties of p-type ZnO. Semicond. Sci. Technol. 20, S55 (2005).
13. O. Bierwagen, T. Nagata, T. Ive, C.G. Van deWalle, and J.S. Speck: Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements. Appl. Phys. Lett. 94, 152110 (2009).
14. A.K. Singh, A. Janotti, M. Scheffler, and C.G. Van deWalle: Sources of electrical conductivity in SnO2. Phys. Rev. Lett. 101, 055502 (2008).
15. C.G. Fonstad and R.H. Rediker: Electrical properties of highquality stannic oxide crystals. J. Appl. Phys. 42, 2911 (1971).
16. A. Tsukazaki,A. Ohtomo, andM.Kawasaki: High-mobility electronic transport in ZnO thin films. Appl. Phys. Lett. 88, 152106 (2006).
17. H. Toyosaki, M. Kawasaki, and Y. Tokura: Electrical properties of Ta-doped SnO2 thin films epitaxially grown on TiO2 substrate. Appl. Phys. Lett. 93, 132109 (2008).
18. S. Lany and A. Zunger: Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors. Phys. Rev. B 80, 085202 (2009).
19. M.Y. Tsai: Plasma-assisted molecular beam epitaxy growth and properties of tin oxide. Ph.D. Thesis, University of California, Santa Barbara, CA, 2010.
20. A. Schleife, J.B. Varley, F. Fuchs, C. Rödl, F. Bechstedt, P. Rinke, A. Janotti, and C G. Van de Walle: Tin dioxide from first principles: Quasiparticle electronic states and optical properties. Phys. Rev. B 83, 035116 (2011).
21. M.E. White: Molecular beam epitaxy and characterization of stannic oxide. Ph.D. Thesis, University of California, Santa Barbara, CA, 2010.
22. O. Bierwagen, M.E. White, M.Y. Tsai, T. Nagata, and J.S. Speck: Non-alloyed Schottky and ohmic contacts to as-grown and oxygenplasma treated n-type SnO2 (110) and (101) thin films. Appl. Phys. Express 2, 106502 (2009).
23. T. Nagata, O. Bierwagen, M.E. White, M.Y. Tsai, and J.S. Speck: Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films. J. Appl. Phys. 107, 033707 (2010).
24. C.H. Swartz, R.P. Tompkins, N.C. Giles, T.H. Myers, H. Lu, W.J. Schaff, and L.F. Eastman: Investigation of multiple carrier effects in InN epilayers using variable magnetic field hall measurements. J. Cryst. Growth 269, 29 (2004).
25. T. Nagata, O. Bierwagen, M.E. White, M.Y. Tsai, Y. Yamashita, H. Yoshikawa, N. Ohashi, K. Kobayashi, T. Chikyow, and J.S. Speck: XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films. Appl. Phys. Lett. 98, 232107 (2011).