High electron mobility In2O3(001) and (111) thin films with nondegenerate electron concentration

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Bierwagen, Oliver ^a   Speck, James S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SINGLE CRYSTALS; ELECTRON CONCENTRATION; FREEZE OUT; HALL MEASUREMENTS; HIGH ELECTRON MOBILITY; HIGH QUALITY; IONIZATION ENERGIES; LOW TEMPERATURES; MATERIAL QUALITY; POSTGROWTH ANNEALING; ROOM TEMPERATURE; TEMPERATURE DEPENDENT;

CONCENTRATION (PROCESS); ELECTRON MOBILITY; ELECTRONS; GALVANOMAGNETIC EFFECTS; OXYGEN; OXYGEN VACANCIES; THIN FILMS;

SINGLE CRYSTALS;

EID: 77956027433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3480416     Document Type: Article

References (24)

1. P. D. C. King, T. D. Veal, D. J. Payne, A. Bourlange, R. G. Egdell, and C. F. McConville, Phys. Rev. Lett. PRLTAO 0031-9007 101, 116808 (2008). 10.1103/PhysRevLett.101.116808
2. O. Bierwagen, M. E. White, M. -Y. Tsai, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 95, 262105 (2009). 10.1063/1.3276910
3. R. L. Weiher, J. Appl. Phys. JAPIAU 0021-8979 33, 2834 (1962). 10.1063/1.1702560
4. T. Koida and M. Kondo, J. Appl. Phys. JAPIAU 0021-8979 99, 123703 (2006). 10.1063/1.2203722
5. H. Ohta, M. Orita, M. Hirano, H. Tanji, H. Kawazoe, and H. Hosono, Appl. Phys. Lett. APPLAB 0003-6951 76, 2740 (2000). 10.1063/1.126461
6. K. H. L. Zhang, D. J. Payne, R. G. Palgrave, V. K. Lazarov, W. Chen, A. T. S. Wee, C. F. McConville, P. D. C. King, T. D. Veal, G. Panaccione, P. Lacovig, and R. G. Egdell, Chem. Mater. CMATEX 0897-4756 21, 4353 (2009). 10.1021/cm901127r
7. A. Bourlange, D. Payne, R. Palgrave, J. Foord, R. Egdell, R. Jacobs, A. Schertel, J. Hutchison, and P. Dobson, Thin Solid Films THSFAP 0040-6090 517, 4286 (2009). 10.1016/j.tsf.2008.11.134
8. A. Dixit, C. Sudakar, R. Naik, V. M. Naik, and G. Lawes, Appl. Phys. Lett. APPLAB 0003-6951 95, 192105 (2009). 10.1063/1.3262963
9. G. Frank and H. Koestlin, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 27, 197 (1982). 10.1007/BF00619080
10. G. B. González, T. O. Mason, J. P. Quintana, O. Warschkow, D. E. Ellis, J. -H. Hwang, J. P. Hodges, and J. D. Jorgensen, J. Appl. Phys. JAPIAU 0021-8979 96, 3912 (2004). 10.1063/1.1783610
11. O. Bierwagen and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 107, 113519 (2010). 10.1063/1.3415539
12. J. Son, P. Moetakef, B. Jalan, O. Bierwagen, N. J. Wright, R. Engel-Herbert, and S. Stemmer, Nature Mater. NMAACR 1476-1122 9, 482 (2010). 10.1038/nmat2750
13. M. E. White, O. Bierwagen, M. Y. Tsai, and J. S. Speck, J. Appl. Phys. JAPIAU 0021-8979 106, 093704 (2009). 10.1063/1.3254241
14. O. Bierwagen, T. Ive, C. G. van de Walle, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 93, 242108 (2008). 10.1063/1.3052930
15. L. J. van der Pauw, Philips Res. Rep. PRREA9 0031-7918 13, 1 (1958).
16. C. G. Fonstad and R. H. Rediker, J. Appl. Phys. JAPIAU 0021-8979 42, 2911 (1971). 10.1063/1.1660648
17. J. H. W. de Wit, J. Solid State Chem. JSSCBI 0022-4596 13, 192 (1975). 10.1016/0022-4596(75)90118-8
18. J. H. W. de Wit, J. van der Bom, and J. F. de Groot, J. Solid State Chem. JSSCBI 0022-4596 25, 101 (1978). 10.1016/0022-4596(78)90047-6
19. N. Mott, Proc. R. Soc. London, Ser. A PRLAAZ 0950-1207 382, 1 (1982). 10.1098/rspa.1982.0086
20. U. K. Mishra and J. Singh, Semiconductor Device Phyiscs and Design (Springer, Dordrecht, 2008).
21. I. Hamberg and C. G. Granqvist, J. Appl. Phys. JAPIAU 0021-8979 60, R123 (1986). 10.1063/1.337534
22. A. Walsh, C. R. A. Catlow, A. A. Sokol, and S. M. Woodley, Chem. Mater. CMATEX 0897-4756 21, 4962 (2009). 10.1021/cm902280z
23. D. C. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).
24. A. T. Ramu, L. E. Cassels, N. H. Hackman, H. Lu, J. M. O. Zide, and J. E. Bowers, J. Appl. Phys. JAPIAU 0021-8979 107, 083707 (2010). 10.1063/1.3366712