Transport and angular resolved photoemission measurements of the electronic properties of In 2O 3 bulk single crystals

Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

  Scherer, V ^a   Janowitz, C ^a   Krapf, A ^a   Dwelk, H ^a   Braun, D ^a   Manzke, R ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BCC STRUCTURE; BULK SINGLE CRYSTALS; CHEMICAL VAPOUR TRANSPORT; DEGENERATE SEMICONDUCTORS; EFFECTIVE MASS; HIGH QUALITY; HIGH RESOLUTION; PHOTOEMISSION MEASUREMENTS; TEMPERATURE DEPENDENCE;

CONDUCTION BANDS; CRYSTAL STRUCTURE; ELECTRONIC PROPERTIES; HALL MOBILITY; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DEVICE MODELS; TRANSPORT PROPERTIES;

SINGLE CRYSTALS;

EID: 84861825930     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4719665     Document Type: Article

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