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Journal of Applied Physics

Volumn 106, Issue 4, 2009, Pages

Tunable ferromagnetism by oxygen vacancies in Fe-doped In2 O3 magnetic semiconductor

(6) Xing, P F a Chen, Y X a Yan, Shi Shen a Liu, G L a Mei, L M a Zhang, Z b

a SHANDONG UNIVERSITY (China)

b BEIJING UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING IN VACUUM; DEPOSITION CONDITIONS; F CENTERS; FE ATOMS; FE-DOPED; MAGNETIZATION STATE; MODIFIED MODEL; NON-MONOTONIC DEPENDENCE; OXYGEN PRESSURE;

CORUNDUM; FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; MAGNETS; OXYGEN; PULSED LASER DEPOSITION; SATURATION MAGNETIZATION;

OXYGEN VACANCIES;

EID: 69749091287 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3202287 Document Type: Article

Times cited : (35)

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