Investigation of the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

Thin Solid Films

Volumn 517, Issue 15, 2009, Pages 4286-4294

  Bourlange, A ^a   Payne, D J ^a   Palgrave, R G ^a   Foord, J S ^a   Egdell, R G ^a   Jacobs, R M J ^a   Schertel, A ^b   Hutchison, J L ^a   Dobson, P J ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b CARL ZEISS SMT AG   (Germany)

Author keywords

Atomic force microscopy; High resolution transmission electron microscopy; Indium oxide; Molecular beam epitaxy; X ray photoelectron spectroscopy

Indexed keywords

BREAK-UP; CORE LEVELS; EPITAXIAL RELATIONSHIPS; GRANULAR FILMS; INDIUM OXIDE; ISLAND FILMS; OXYGEN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIES; SELECTED AREA ELECTRON DIFFRACTIONS; SUBSTRATE TEMPERATURES; X- RAY DIFFRACTIONS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; CRYSTAL GROWTH; DIFFRACTION; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELECTRONS; EPITAXIAL FILMS; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR OXYGEN; MOLECULAR SPECTROSCOPY; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM WIRES; SPECTRUM ANALYSIS; SUBSTRATES; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM ALLOYS;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 67349276983     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.11.134     Document Type: Article

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