Effect of Sn doping on the crystal growth of indium oxide films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6585-6586

  Taga, Naoaki ^a   Maekawa, Mikako ^a   Kamei, Masayuki ^b   Yasui, Itaru ^b   Shigesato, Yuzo ^c  

^a ASAHI GLASS CO LTD   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

Doping; Growth rate; Hetero epitaxial; In2O3; ITO; Molecular beam epitaxy; Morphology; SEM; Sn; Spiral; Thin film

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THIN FILMS; TIN; ZIRCONIA;

INDIUM TIN OXIDE;

SEMICONDUCTING FILMS;

EID: 0032304777     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6585     Document Type: Article

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