In2O3 nanowires as chemical sensors

Applied Physics Letters

Volumn 82, Issue 10, 2003, Pages 1613-1615

  Li, Chao ^a   Zhang, Daihua ^a   Liu, Xiaolei ^a   Han, Song ^a   Tang, Tao ^a   Han, Jie ^a,b   Zhou, Chongwu ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; NANOSTRUCTURED MATERIALS; THRESHOLD VOLTAGE; TRANSISTORS;

NANOWIRES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037429890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559438     Document Type: Article

References (15)

1. Y. Shimizu and M. Egashira, MRS Bull. 24, 18 (1999).
2. D. E. Williams, Sens. Actuators B 57, 1 (1999).
3. S. Strassler and A. Reis, Sens. Actuators 4, 465 (1983).
4. W. Y. Chung, G. Sakai, K. Shimanoe, N. Miura, D. D. Lee, and N. Yamazoe, Sens. Actuators B 46, 139 (1998).
5. M. Liess, Thin Solid Films 40, 183 (2002).
6. J. Tamaki, C. Naruo, Y. Yamanoto, and M. Matsuoka, Sens. Actuators B 83, 190 (2002).
7. G. Kiriakids, M. Bender, N. Kataarakis, E. Gagaoudakis, E. Hourdakis, E. Douloufakis, and V. Cimalla, Phys. Status Solidi A 185, 27 (2001).
8. J. Kong, N. R. Franklin, C. Zhou, M. G. Chapline, S. Peng, K. Cho, and H. Dai, Science 287, 622 (2000).
9. J. Kong, M. G. Chapline, and H. Dai, Adv. Mater. 13, 1384 (2001).
10. M. Law, H. Kind, B. Messer, F. Kim, and P. Yang, Angew. Chem. Int. Ed. Engl. 41, 2405 (2002).
11. E. Comini, G. Faglia, G. Sberveglieri, Z. Pan, and Z. Wang, Appl. Phys. Lett. 81, 1869 (2002).
12. C. Li, D. Zhang, S. Han, X. Liu, T. Tang, and C. Zhou, Adv. Mater. 15, 143 (2003).
13. D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou, Appl. Phys. Lett. 82, 112(2003).
14. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
15. C. Zhou, J. Kong, E. Yenilmez, and H. Dai, Science 290, 1552 (2000).