Donor compensation and carrier-transport mechanisms in tin-doped in2O3 films studied by means of conversion electron119Sn mössbauer spectroscopy and hall effect measurements

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 4158-4163

  Yamada, Naoomi ^a   Yasui, Itaru ^a   Shigesato, Yuzo ^b   Li, Hongling ^c   Ujihira, Yusuke ^c   Nomura, Kiyoshi ^d  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

119Sn M ssbauer spectroscopy; Donor compensation; Tin doped in2O3; Tin oxygen complex

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; FILM PREPARATION; HALL EFFECT; MOSSBAUER SPECTROSCOPY; PROBES; SEMICONDUCTOR DOPING; TIN;

CARRIER TRANSPORT MECHANISMS; CONVERSION ELECTRON MOSSBAUER SPECTROSCOPY; DONOR COMPENSATION; HALL EFFECT MEASUREMENTS; HALL MOBILITY; TIN DOPED INDIUM OXIDE FILMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034215434     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4158     Document Type: Article

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