메뉴 건너뛰기




Volumn 401, Issue , 2014, Pages 588-592

Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films

Author keywords

A1. Crystal structure; A3. Chemical vapor deposition processes; B1. Oxides; B2. Semiconducting ternary compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION PROCESS; SEMICONDUCTING TERNARY COMPOUNDS; SEMICONDUCTOR THIN FILMS; WIDE BAND GAP;

EID: 84906959673     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2014.02.032     Document Type: Article
Times cited : (143)

References (61)
  • 57
    • 84906963391 scopus 로고    scopus 로고
    • 17th International Conference on Crystal Growth and Epitaxy, Warsaw, submitted to the Conference Proceedings
    • N. Suzuki, K. Kaneko, S. Fujita, Presented at the 17th International Conference on Crystal Growth and Epitaxy, Warsaw, submitted to the Conference Proceedings, Physica Status Solidi (C), 2013.
    • (2013) Physica Status Solidi (C)
    • Suzuki, N.1    Kaneko, K.2    Fujita, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.