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Volumn 108, Issue 5, 2010, Pages

Limits for n -type doping in In2 O3 and SnO 2: A theoretical approach by first-principles calculations using hybrid-functional methodology

(6) Ágoston, Ṕter a Körber, Christoph a Klein, Andreas a Puska, Martti J b Nieminen, Risto M b Albe, Karsten a

a DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

b AALTO UNIVERSITY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; INDIUM OXIDE; INTRINSIC LIMIT; N-TYPE DOPING; THEORETICAL APPROACH;

SEMICONDUCTOR DOPING; TIN; TIN OXIDES; TITANIUM COMPOUNDS;

DENSITY FUNCTIONAL THEORY;

EID: 77956833188 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3467780 Document Type: Article

Times cited : (61)

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