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Physical Review B - Condensed Matter and Materials Physics

Volumn 86, Issue 24, 2012, Pages

Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire

(9) Vasheghani Farahani, S K a Veal, T D b Sanchez, A M a Bierwagen, O c,d White, M E c Gorfman, S a Thomas, P A a Speck, J S c McConville, C F a

a UNIVERSITY OF WARWICK (United Kingdom)

b UNIVERSITY OF LIVERPOOL (United Kingdom)

c University of California (United States)

d PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84871598211 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.86.245315 Document Type: Article

Times cited : (16)

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