Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering - A case study on indium oxide

Journal of Applied Physics

Volumn 115, Issue 5, 2014, Pages

  Albrecht, M ^a   Schewski, R ^a   Irmscher, K ^a   Galazka, Z ^a   Markurt, T ^a   Naumann, M ^a   Schulz, T ^a   Uecker, R ^a   Fornari, R ^a,c   Meuret, S ^b   Kociak, M ^b  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b CNRS   (France)

^c UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ENERGY GAP; INDIUM COMPOUNDS; IONIZATION; LIGHT ABSORPTION; NANOPARTICLES; OXIDE SEMICONDUCTORS; PLASMONS; PRECIPITATION (CHEMICAL); SURFACE PLASMON RESONANCE; WIDE BAND GAP SEMICONDUCTORS;

ABSORPTION MEASUREMENTS; DIELECTRIC MATRIXES; INDIUM NANOPARTICLES; LOCALIZED SURFACE PLASMON RESONANCE; METALLIC NANOPARTICLES; OPTICAL AND ELECTRON MICROSCOPIES; PARTICLE DISTRIBUTIONS; TRANSITION ENERGY LEVELS;

OXYGEN VACANCIES;

EID: 84906861126     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4863211     Document Type: Article

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