High electron mobility W-doped In 2O 3 thin films by pulsed laser deposition

Applied Physics Letters

Volumn 87, Issue 11, 2005, Pages

  Newhouse, P F ^a   Park, C H ^a   Keszler, D A ^a   Tate, J ^a   Nyholm, P S ^b  

^a OREGON STATE UNIVERSITY   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP SHIFTS; DOPANTS; ELECTRON CARRIER DENSITY; TRANSMITANCE;

CARRIER CONCENTRATION; DOPING (ADDITIVES); INDIUM COMPOUNDS; PULSED LASER DEPOSITION; SILICA; SINGLE CRYSTALS; TUNGSTEN;

ELECTRON MOBILITY;

EID: 24944542833     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2048829     Document Type: Article

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