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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6524-6529

Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy

(6) Taga, Naoaki a Maekawa, Mikako a Shuigesato, Yuzo b Yasui, Itaru c Kakei, Masayuki c Haynes, T E d

a ASAHI GLASS CO LTD (Japan)

b AOYAMA GAKUIN UNIVERSITY (Japan)

c INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

d OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

Crystallinity; Hetero epitaxial; In2O3; Molecular beam epitaxy; Rutherford backscattering; Thin film; Volmer Weber

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DEPOSITION; MOLECULAR BEAM EPITAXY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; THIN FILMS; X RAY CRYSTALLOGRAPHY; ZIRCONIA;

ELECTRON BEAM EVAPORATION; FULL WIDTH AT HALF MAXIMUM (FWHM); INDIUM OXIDE; X RAY ROCKING CURVES;

SEMICONDUCTING FILMS;

EID: 0032298603 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.6524 Document Type: Article

Times cited : (54)

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