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Applied Physics Express

Volumn 3, Issue 5, 2010, Pages

Synthesis and characterization of highly resistive epitaxial indium-doped SnO2

(4) White, Mark E a Bierwagen, Oliver a Tsai, Min Ying a Speck, James S a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; DOPED FILMS; DOPED LAYERS; FUNDAMENTAL PROPERTIES; PLANE SAPPHIRE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RESISTIVE FILM; SINGLE-CRYSTALLINE; SYNTHESIS AND CHARACTERIZATION;

CRYSTAL GROWTH; ELECTRIC RESISTANCE; EPITAXIAL FILMS; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDE FILMS; SHEET RESISTANCE; SYNTHESIS (CHEMICAL); TIN; TITANIUM COMPOUNDS;

DOPING (ADDITIVES);

EID: 77952774537 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.051101 Document Type: Article

Times cited : (28)

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